| PART |
Description |
Maker |
| SB02-03C-TA SB02-03Q-TR SANYOSEMICONDUCTORCOLTD-SB |
0.2 A, 30 V, SILICON, SIGNAL DIODE
0.02 A, 150 V, SILICON, SIGNAL DIODE
2 A, 30 V, SILICON, RECTIFIER DIODE
0.1 A, 50 V, SILICON, SIGNAL DIODE
|
SANYO SEMICONDUCTOR CO LTD
|
| SF16H03-3 SF33H35 |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD
|
RECTRON LTD
|
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| 1N5806D2B-JQRS.GRPC 1N5806D2A |
1 A, 150 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN
ULTRAFAST RECOVERY RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 2SC2631 2SA1123 |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
http://
|
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| HN1C01FE HN1C01FE-Y |
150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| ESH1PC-E3/84A ESH1PB-E3/84A ESH1PB-E3/85A ESH1PCHE |
1 A, 150 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
|
Vishay Beyschlag
|
|
